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| AP40N03S Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching GD S N-CHANNEL ENHANCEMENT MODE POWER MOS FET BVDSS RDS(ON) ID TO-263 30V 17m 40A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40N03P) is available for low-profile applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit /W /W Data & specifications subject to change without notice 200218032 AP40N03S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 17 23 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=16A 14 20 26 17 3 10 7.2 60 22.5 10 800 380 133 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=20A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 40 169 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=40A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP40N03S 150 T C =25 o C 150 V G =10V V G =8.0V ID , Drain Current (A) 100 T C =150 o C V G =10V V G =8.0V ID , Drain Current (A) V G =6.0V 100 V G =6.0V 50 V G =4.0V 50 V G =4.0V V G =3.0V V G =3.0V 0 0 1 2 3 4 5 6 7 8 9 0 0 1 2 3 4 5 6 7 8 9 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 28 1.8 26 I D = 2 0A 1.6 I D =20A V G =10V Normalized R DS(ON) 1.4 T C =25 o C 24 22 RDS(ON) (m ) 20 1.2 18 1 16 0.8 14 12 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP40N03S 50 60 45 50 40 35 ID , Drain Current (A) 40 30 25 20 20 15 10 10 5 0 25 50 75 100 125 150 PD (W) 30 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 100 Normalized Thermal Response (R thjc) DUTY=0.5 0.2 ID (A) 10us 100us 10 0.1 0.1 0.05 1ms o 0.02 PDM SINGLE PULSE t 0.01 T T c =25 C Single Pulse 1 1 10 10ms 100ms 100 Duty factor = t/T Peak Tj = P DM x Rthjc + TC V DS (V) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP40N03S 16 10000 f=1.0MHz I D =20A 14 VGS , Gate to Source Voltage (V) 12 V DS =16V V DS =20V V DS =24V C (pF) 1000 10 8 Ciss 6 Coss 4 2 Crss 0 0 5 10 15 20 25 30 35 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j = 150 o C 2 1 VGS(th) (V) 1 0 -50 T j = 25 C IS (A) o 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP40N03S VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + 0.8 x RATED VDS QGS QGD VGS 1~3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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